High-Power / High-Voltage (250 kW / 750V) SiC-Based Inverter for Electric Vehicles Applications

This paper presents the study and development of a high-power range traction inverter based on Full Silicon Carbide semiconductors. Implementing this breakthrough technology leads to an increase of the converter power density as well as its efficiency at high-frequency operation. Experimental characterization contributes to understanding of the power module switching behavior under different conditions with variation of some key parameters (gate driver resistor, load current, switching voltage, and stray inductor). Full-scale experimental results are provided to demonstrate a converter efficiency of 99% and a power density of 28 kW/L.

[1]  A. Abdenour,et al.  Ferrite Assisted Synchronous Reluctance Motor: Simulation Methods and Experimental Validation , 2021, 2021 IEEE International Electric Machines & Drives Conference (IEMDC).

[2]  Boyi Zhang,et al.  A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices , 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[3]  Hong Li,et al.  A Voltage-injected Active Gate Driver for Improving the Dynamic Performance of SiC MOSFET , 2019, 2019 IEEE Energy Conversion Congress and Exposition (ECCE).

[4]  Yang Wen,et al.  A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules , 2019, IEEE Transactions on Power Electronics.

[5]  Ali Emadi,et al.  Automotive Traction Inverters: Current Status and Future Trends , 2019, IEEE Transactions on Vehicular Technology.

[6]  J. Kolar,et al.  Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs , 2018, CPSS Transactions on Power Electronics and Applications.

[7]  Thomas M. Jahns,et al.  The past, present, and future of power electronics integration technology in motor drives , 2017 .

[8]  C. Vollaire,et al.  Improved Layout of Inverter for EMC Analysis , 2017 .

[9]  Andreas Volke,et al.  Gate-Driver with Full Protection for SiC-MOSFET Modules , 2016 .

[10]  Hans-Peter Nee,et al.  Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors , 2016, IEEE Transactions on Industrial Electronics.

[11]  Eugen Wiesner,et al.  New 1200V full SiC module with 800A rated current , 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).

[12]  D. Boroyevich,et al.  An ultra-fast SiC phase-leg module in modified hybrid packaging structure , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[13]  L. Tolbert,et al.  Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration , 2014, IEEE Transactions on Power Electronics.

[14]  F. Casanellas,et al.  Losses in PWM inverters using IGBTs , 1994 .