Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)
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Peng Chen | Soo Jin Chua | Z. L. Miao | Sudhiranjan Tripathy | S. Chua | S. Tripathy | Peng Chen | Z. Miao
[1] S. Einfeldt,et al. Strain relaxation in AlGaN under tensile plane stress , 2000 .
[2] Alan Francis Wright,et al. Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN , 1997 .
[3] J. H. Selverian,et al. Strength and toughness measurement of thin brittle coatings on substrates Part I. Theory and measurement , 1993 .
[4] H. Temkin,et al. Selective growth of high quality GaN on Si(111) substrates , 2000 .
[5] W. Knap,et al. Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN , 1995 .
[6] Krüger,et al. Strain-related phenomena in GaN thin films. , 1996, Physical review. B, Condensed matter.
[7] A. N. Smirnov,et al. Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC , 1997 .
[8] R. Dimitrov,et al. Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures , 2001 .
[9] Steven Prawer,et al. Optical phonons of hexagonal AlxGa1−xN: Simulation and experiment , 2001 .
[10] J. Massies,et al. Micro‐Raman Study of Wurtzite AlN Layers Grown on Si(111) , 2001 .
[11] C. J. Smithells,et al. Smithells metals reference book , 1949 .
[12] Zhe Chuan Feng,et al. Enhanced optical emission from GaN films grown on a silicon substrate , 1999 .
[13] Supratik Guha,et al. Ultraviolet and violet GaN light emitting diodes on silicon , 1998 .
[14] Jaime A. Freitas,et al. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors , 2001 .
[15] Yasumasa Okada,et al. Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K , 1984 .
[16] Joseph Salzman,et al. Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy , 2001 .
[17] M. Sánchez-García,et al. Optical investigation of strain in Si-doped GaN films , 2001 .
[18] H. Temkin,et al. Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313 , 2001 .
[19] Sven Einfeldt,et al. Strain relaxation in AlGaN/GaN superlattices grown on GaN , 2001 .
[20] H. Asahi,et al. Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy , 1999 .
[21] W. Rieger,et al. Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films , 1996 .
[22] J. J. Tietjen,et al. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .
[23] Bernard Gil,et al. Raman determination of phonon deformation potentials in α-GaN , 1996 .
[24] Pierre Gibart,et al. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy , 2001 .
[25] A. Lunev,et al. Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates , 2000 .
[26] Henryk Temkin,et al. Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN , 2001 .
[27] T. Kozawa,et al. THERMAL STRESS IN GAN EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES , 1995 .
[28] Isamu Akasaki,et al. Strain Modification of GaN in AlGaN/GaN Epitaxial Films , 1999 .
[29] Izabella Grzegory,et al. Elastic constants of gallium nitride , 1996 .
[30] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[31] J. Massies,et al. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment , 1999 .
[32] S. Timoshenko,et al. Analysis of Bi-Metal Thermostats , 1925 .
[33] Henryk Temkin,et al. HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA , 1999 .