Large area, ultra-high voltage 4H-SiC p-i-n rectifiers
暂无分享,去创建一个
Allen R. Hefner | John W. Palmour | David W. Berning | Jim Richmond | J. Richmond | A. Hefner | J. Palmour | D. Berning | D. C. Capell | K. Irvine | Ranbir Singh | Kenneth G. Irvine | R. Singh
[1] B. Breitholtz,et al. Time-resolved imaging of radiative recombination in 4H–SiC p-i-n diode , 1999 .
[2] Q. Wahab,et al. Ionization rates and critical fields in 4H silicon carbide , 1997 .
[3] O. Kordina,et al. 4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage , 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).
[4] Allen R. Hefner,et al. SiC power diodes provide breakthrough performance for a wide range of applications , 2001 .
[5] M. Ghezzo,et al. Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers , 2001, IEEE Electron Device Letters.
[6] H. Lendenmann,et al. Operation of a 2500V 150A Si-IGBT / SiC Diode Module , 2000 .
[7] A. Holmes-Siedle,et al. Semiconductor Devices , 1976, 2018 International Semiconductor Conference (CAS).
[8] R. Singh,et al. Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
[9] Steven T. Peake,et al. Power semiconductor devices , 1995 .
[10] H. Lendenmann,et al. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes , 2001 .
[11] P. Friedrichs,et al. Switching behaviour of fast high voltage SiC pn-diodes , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
[12] H. Bleichner,et al. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects , 2002 .