论文信息 - Direct noise characterization of microwave FET using 50Ω noise figure and Y-parameter measurements

Direct noise characterization of microwave FET using 50Ω noise figure and Y-parameter measurements

A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the Y-parameters and two equivalent noise temperatures, is presented. The method requires only the measured small-signal parameters and 50Ω noise figure, thus avoiding the extraction of the small-signal equivalent circuit. It is particularly suitable for noise characterization of coplanar devices. Good agreement with the results of more conventional methods is demonstrated in a wide frequency range.

Franco Giannini | Antonio Serino | Ernesto Limiti | Marco De Dominicis

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