论文信息 - Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.

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