On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum

In the early 1990s, active power devices have been shown to be susceptible to radiation-induced failures. Many studies have been focused on cosmic ray-induced power device failures, including even IGBT failures. Till the end of the 1990s, IGBT technologies were susceptible to static or dynamic latch-up, which are respectively occurring in their forward conduction or switching mode. From then on, new technologies, such as trench gate fieldstop IGBTs providing significant improvement in the latching current capability, have been developed. But so far, the impact of atmospheric radiation has not been assessed on actual technologies. With the expected increase of embedded IGBTs in avionics and automotive applications, the impact of neutrons on the functional security of embedded systems has to be quantified.

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