A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices

A simple, robust, accurate method to extract the thermal resistance of BJT/HBT devices is proposed, which only needs the measured device DC I-V characteristics at room temperature. No optimization is needed to extract the thermal resistance. The proposed method is verified using a variety of BJT/HBT devices. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 499–502, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10648