High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8×1011cmHz1∕2∕W at 120K and a bias of −5V with a peak detection wavelength around 4.1μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7×107cmHz1∕2∕W.

[1]  Wei Zhang,et al.  Quantum dot infrared photodetectors: Comparison of experiment and theory , 2005 .

[2]  Meimei Z. Tidrow,et al.  High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition , 2004 .

[3]  S. Krishna.  Quantum dots-in-a-well infrared photodetectors , 2005 .

[4]  Joe C. Campbell,et al.  High detectivity InAs quantum dot infrared photodetectors , 2004 .

[5]  Sir B. Rafol,et al.  1024 × 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications , 2005 .

[6]  Wei Zhang,et al.  High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition , 2005 .

[7]  Meimei Z. Tidrow,et al.  Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors , 2004 .

[8]  S.B. Rafol,et al.  High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity , 2004, IEEE Photonics Technology Letters.

[9]  Joe C. Campbell,et al.  Noise and photoconductive gain in InAs quantum-dot infrared photodetectors , 2003 .

[10]  Dieter Bimberg,et al.  Spontaneous ordering of nanostructures on crystal surfaces , 1999 .

[11]  Victor Ryzhii,et al.  The theory of quantum-dot infrared phototransistors , 1996 .

[12]  Si-Chen Lee,et al.  High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array , 2006, IEEE Photonics Technology Letters.

[13]  Sanjay Krishna,et al.  Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors , 2005 .

[14]  Hsien-Shun Wu,et al.  Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer , 2001 .

[15]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .