Simulation of gate lag and current collapse in GaN heterojunction field effect transistors
暂无分享,去创建一个
R. Mickevicius | G. Simin | N. Braga | M. Shur | R. Gaska | M. Asif Khan
[1] Michael S. Shur,et al. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors , 2001 .
[2] S. Selberherr. Analysis and simulation of semiconductor devices , 1984 .
[3] R. Stratton,et al. Diffusion of Hot and Cold Electrons in Semiconductor Barriers , 1962 .
[4] Hiroshi Harima,et al. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. , 2002 .
[5] Michael S. Shur,et al. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor , 2001 .
[6] R. Mickevicius,et al. Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors , 2004 .
[7] K. Blotekjaer. Transport equations for electrons in two-valley semiconductors , 1970 .
[8] K. Boutros,et al. Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure , 1998 .