Gate drive for high speed, high power IGBTs

A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu/s with a rate of current rise of more than 10000 A//spl mu/s, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current are presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak currents and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

[1]  R.L. Cassel,et al.  A solid state induction modulator for SLAC NLC , 1999, Proceedings of the 1999 Particle Accelerator Conference (Cat. No.99CH36366).

[2]  M.N. Nguyen,et al.  A solid state modulator for driving SLAC 5045 klystrons , 2001, PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251).

[3]  M.N. Nguyen,et al.  A new type short circuit failures of high power IGBT's , 2001, PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251).