7.4 Characterization & Modeling of Low Electric Field Gate-Induced-Drain-Leakage

We present measurements of GIDL at various tempera- tures and terminal biases. Besides Band-to-Band (BBT) tun- neling leakage observed at high Drain-to-Gate voltuge V,, , we also observed Trap-Assisted-Tunneling (TAT) leakage current at lower V,, . Based on ISE TCXD simula- tions of the electric field, we.propose analytical models for BBT and TAT GIDL currents suitable for compact model- ling.