论文信息 - Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ nSα. The result doesn't depend on contact resistance. The method provides a physically sound value: VG-VT is proportional to the channel carrier density as checked with VG-dependent Hall measurements in companion gated Hall devices.

Vincent Mosser | Youcef Haddab | David Seron

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