Continuing degradation of the SiO2/Si interface after hot hole stress

This article reports new experimental results on the continuing interface trap generation post-hot hole injection and investigates the generation mechanism. The generation post-hole injection is found to be two orders of magnitude slower than that post-irradiation and cannot be satisfactorily explained by the transportation of hydrogen species across the gate oxide. The role played by the recombination of trapped holes with free electrons is examined. There is a lack of correlation between the trapped hole removal and the interface trap creation, which is against the prediction of the trapped hole conversion model. The results indicate that the interface traps generated during and post-stress originate from two different defects. The defect responsible for post-stress generation is excited by hole injection and then converted into an interface trap if a positive gate bias is applied. It is found that generation in a poly-Si gated metal–oxide–semiconductor field effect transistor behaves differently from that in an Al-gated device. The possible causes for this difference are discussed.

[1]  Guido Groeseneken,et al.  On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors , 1994 .

[2]  S. Lai,et al.  Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .

[3]  M. Bourcerie,et al.  Relaxation effects in NMOS transistors after hot-carrier stressing , 1987, IEEE Electron Device Letters.

[4]  Michael J. Uren,et al.  Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique , 1992 .

[5]  Cheng T. Wang,et al.  Hot carrier design considerations for MOS devices and circuits , 1992 .

[6]  Tso-Ping Ma,et al.  Interface trap transformation in radiation or hot-electron damaged MOS structures , 1989 .

[7]  Stephen Aplin Lyon,et al.  Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures , 1988 .

[8]  Douglas A. Buchanan.  On the generation of interface states from electron‐hole recombination in metal‐oxide‐semiconductor capacitors , 1994 .

[9]  William Eccleston,et al.  Electron trap generation in thermally grown SiO2 under Fowler-Nordheim stress , 1992 .

[10]  N. Saks,et al.  Observation of H/sup +/ motion during interface trap formation , 1990 .

[11]  Oxide and interface degradation resulting from substrate hot‐hole injection in metal‐oxide‐semiconductor field‐effect transistors at 295 and 77 K , 1994 .

[12]  Arthur H. Edwards,et al.  Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors , 1993 .

[13]  T. Ma,et al.  Possible observation of Pb0 and Pb1 centers at irradiated (100)Si/SiO2 interface from electrical measurements , 1991 .

[14]  G. Groeseneken,et al.  Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection , 1993 .

[15]  Geert Van den bosch,et al.  Critical analysis of the substrate hot-hole injection technique , 1994 .

[16]  J. F. Zhang,et al.  Donor-like interface trap generation in pMOSFET's at room temperature , 1994 .

[17]  James H. Stathis,et al.  Identification of an interface defect generated by hot electrons in SiO2 , 1992 .

[18]  R. K. Lawrence,et al.  Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .

[19]  James H. Stathis,et al.  Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface , 1995 .

[20]  N. D. Arora,et al.  Circuit design guidelines for n-channel MOSFET hot carrier robustness , 1993 .

[21]  J. Zhang,et al.  A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation , 1992 .