8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation
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H. Matsuo | Y. Uemoto | S. Nagai | T. Tanaka | M. Yanagihara | D. Ueda | T. Ueda | H. Ishida | N. Batta | H. Ishida | Y. Uemoto | T. Tanaka | D. Ueda | T. Ueda | H. Matsuo | M. Yanagihara | S. Nagai | Ming Li | D. Shibata | N. Batta | Ming Li | D. Shibata
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