Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties

[1]  G. Gobsch,et al.  Defect-related photoluminescence of epitaxial cuins2 , 2005 .

[2]  U. Reislöhner,et al.  Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levels , 2004 .

[3]  G. Gobsch,et al.  Optical properties of epitaxial CuGaS2 layers on Si(111) , 2003 .

[4]  J. Álvarez-García,et al.  Quality assessment of chalcopyrite thin films using Raman spectroscopy , 2003 .

[5]  H. Miyake,et al.  Photoreflectance of CuInS2 single crystal prepared by traveling heater method , 2003 .

[6]  A. Chuvilin,et al.  Structural properties of MBE grown Cu(In,Ga)S2 layers on Si , 2003 .

[7]  U. Kaiser,et al.  Microstructure of epitaxial CuGaS2 on Si(111) , 2003 .

[8]  Rommel Noufi,et al.  Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin‐film solar cells , 2003 .

[9]  U. Kaiser,et al.  Structural and optical properties of epitaxial CuGaS2 films on Si substrates , 2003 .

[10]  U. Reislöhner,et al.  Hetero-epitaxial growth of Cu(In,Ga)S2 on Si substrates , 2002 .

[11]  H. Metzner,et al.  Sulphur-terminated silicon surfaces for the epitaxial growth of chalcopyrite semiconductors , 2001 .

[12]  B. Svensson,et al.  Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen , 2000 .

[13]  R. Scheer,et al.  Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments , 1997 .

[14]  H. Metzner,et al.  Epitaxial growth of CuInS2 on sulphur terminated Si(111) , 1996 .

[15]  H. Metzner,et al.  Thin CuInS2 films by three-source molecular beam deposition , 1995 .

[16]  J. Bloem,et al.  Luminescence of CuInS2 , 1982 .

[17]  R. Dingle Radiative Lifetimes of Donor-Acceptor Pairs in p-Type Gallium Arsenide , 1969 .

[18]  P. J. Dean,et al.  Pair Spectra and "Edge Emission" in Zinc Selenide , 1969 .