论文信息 - Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices - 字舞流文

Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

P. Sung | K. Kao | T. Tseng | M. Current | Henry J. H. Chen | Ta-Chun Cho | S. Chuang | Yao-Jen Lee