저전력용 1T 메모리 설계

In this paper, we design an 1T-memory for low power. The circuit consists of a temperature sensor, a SAR-ADC, a clock generator with clock selector, and 1T memory with MIM capacitors. The circuit has been designed using the TSMC 0.18μm CMOS process and simulated using Hsim and Hspice. The simulation result shows that the circuit has power consumption 1.62μ W at 0℃ ~ 30℃, which is equal to 17% of that at 95℃ ~ 100℃.