Assessment of conservative weighting scheme in simulating chemical vapour deposition with trace species

Low-pressure or ultra-high vacuum chemical vapour deposition often involves important trace species in both gas-phase and surface reactions. The conservative weighting scheme (J. Thermophys. Heat Transfer 1996; 10(4) : 579) has been used to deal with the trace species often involved in some non-reactive physical processes, which is otherwise considered computationally impossible using the conventional DSMC method. This conservative weighting scheme (CWS) improves greatly the statistical uncertainties by decreasing the weighting factors of trace-species particles and ensures the conservation of both momentum and energy between two colliding particles with large difference of weighting factors. This CWS is further extended to treat reactive processes for gas-phase and surface reactions with trace species, which is called extended conservative weighting scheme (ECWS). A single-cell equilibrium simulation is performed for verifying both the CWS and ECWS in treating trace species. The results of using CWS show that it is most efficient and accurate for weight ratio (trace to non-trace) equal to or less than 0.01 for flows with two and three species. The results of a single-cell simulation using ECWS for gas-phase reaction and surface reactions show that only ECWS can produce acceptable results with reasonable computational time. Copyright © 2003 John Wiley & Sons, Ltd.

[1]  Graeme A. Bird,et al.  Molecular Gas Dynamics , 1976 .

[2]  Klavs F. Jensen,et al.  Chemical vapor deposition : principles and applications , 1993 .

[3]  K. Kannenberg,et al.  Computational methods for the direct simulation Monte Carlo technique with application to plume impingement , 1998 .

[4]  Robert J. Kee,et al.  A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor , 1989 .

[5]  R. Kee,et al.  A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs Mocvd , 1989 .

[6]  Iain D. Boyd,et al.  Rotational and vibrational nonequilibrium effects in rarefied hypersonic flow , 1990 .

[7]  Graeme A. Bird,et al.  MONTE-CARLO SIMULATION IN AN ENGINEERING CONTEXT , 1980 .

[8]  Iain D. Boyd,et al.  Conservative Species Weighting Scheme for the Direct Simulation Monte Carlo Method , 1996 .

[9]  Chris R. Kleijn,et al.  A Mathematical Model of the Hydrodynamics and Gas‐Phase Reactions in Silicon LPCVD in a Single‐Wafer Reactor , 1991 .

[10]  Klavs F. Jensen,et al.  Simulation of Rarefied Gas Transport and Profile Evolution in Nonplanar Substrate Chemical Vapor Deposition , 1994 .

[11]  W. Steckelmacher Molecular gas dynamics and the direct simulation of gas flows , 1996 .

[12]  Full simulation of silicon chemical vapor deposition process , 2002 .

[13]  Masato Ikegawa,et al.  Deposition Profile Simulation Using the Direct Simulation Monte Carlo Method , 1989 .

[14]  F. Teyssandier,et al.  2D modelling of a non-confined circular impinging jet reactor; Si chemical vapour deposition , 1993 .

[15]  J. Stark,et al.  Direct simulation of chemical reactions , 1990 .

[16]  K.-C. Tseng,et al.  Analysis of micro-scale gas flows with pressure boundaries using direct simulation Monte Carlo method , 2001 .

[17]  Klavs F. Jensen,et al.  Three‐Dimensional Flow Effects in Silicon CVD in Horizontal Reactors , 1988 .