Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
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Michael S. Shur | A. Tarakji | Alexey Koudymov | Grigory Simin | M. Asif Khan | Remigijus Gaska | Xuhong Hu | M. Shur | G. Simin | M. Khan | R. Gaska | J. Yang | A. Koudymov | A. Tarakji | Xuhong Hu | J. W. Yang
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