Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC
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E. Granger | N. Revil | G. Bertrand | F. Gianesello | D. Gloria | E. Canderle | A. Monroy | L. Rolland | J. P. Aubert | V. Vialla | M. Buczko | M. Coly | Jeff Nowakowski | A. Juge | S. Gachon
[1] F. Gianesello,et al. 5 GHz 1.4 dB NF CMOS LNA integrated in 130 nm High Resistivity SOI technology , 2007, 2007 International Symposium on Integrated Circuits.
[2] Zhong-Xiang He,et al. Improvements in SOI technology for RF switches , 2015, 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
[3] Thomas Bruder,et al. Requirements for reconfigurable 4G front-ends , 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
[4] F. Gianesello,et al. Double thick copper BEOL in advanced HR SOI RF CMOS technology: Integration of high performance inductors for RF front end module , 2008, 2008 IEEE International SOI Conference.
[5] J. Costa,et al. Advances in Silicon-On-Insulator Cellular Antenna Switch Technology , 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
[6] D. Kelly,et al. Integration of triple-band GSM antenna switch module using SOI CMOS , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.
[7] D. Belot,et al. 0.13/spl mu/m CMOS SOI SP6T antenna switch for multi-standard handsets , 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
[8] J. Raskin,et al. Non-linear characteristics of passive elements on trap-rich high-resistivity Si substrates , 2014, 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems.