论文信息 - Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

InP-based high electron mobility transistor (HEMT) structures with a pseudomorphic InAlP barrier/spacer and an InGaAs channel were grown by metal-organic vapor-phase epitaxy (MOVPE). The thickness and composition of the InAlP/InGaAs heterostructure were optimized to reduce the gate-channel distance and obtain high electron mobility. The mobility of over 10000 cm2/Vs with the sheet carrier concentration (Ns) of around 2×1012 cm-2 was successfully obtained at room temperature in an In0.75Al0.25P/In0.75Ga0.25As pseudomorphic HEMT. The reliability of the InAlP layer as a gate-recess wet-etching stopper was also confirmed. The pseudomorphic In0.75Al0.25P-barrier/In0.75Ga0.25As-channel layer structure is suitable for practical ultrahigh-speed InP-based HEMTs.

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[2] Takashi Kobayashi,et al. Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors , 2004, IEICE Electron. Express.