Uniformly beam expanded 1.3 /spl mu/m laser diodes with thin separate confinement heterostructure layers for high coupling efficiency and good temperature characteristic

Low-loss-fibre-coupling 1.3 µm laser diodes with excellent temperature characteristics were fabricated by employing thin (20 nm) separate confinement heterostructure layers. Fabricated LDs with an active layer width of 1.5 µm show singlemode-fibre coupling loss of 2.6 dB, threshold current Ith of 16.4 (51.0) mA and high efficiency of 0.5 (0.3) W/A at 25 (85) °C, respectively.