High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
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R. M. Ward | Jie Zhang | D. Sheridan | M. Mazzola | P. Klein | K. Lew | D. Gaskill | I. Sankin | E. Glaser | V. Bondarenko | S. Sunkari | J. Mazzola | G. Stewart | David E. Null