In hyper NA system, specific illumination combined with polarization can be used as one of major RET techniques. Polarization at high NA dry system is also regarded as important technology to bring improvement of very low k1 process. The benefits of polarization on repeated structure are very well known. However we also need to understand the effect on random pattern in peripheral region to adopt polarization technology successfully into real devices. Memory device such as DRAM and NAND Flash has repeated cell structure and also loose pattern in peripheral region. In this study two kinds of polarization function will be applied to real memory devices and the polarization behavior on various patterns in peripheral circuit will be analyzed through actual printing process using 6% attenuated PSM at ArF high NA dry system. The printed result will be compared on random patterns through in-line metrology tool and process guideline including OPC treatment will be discussed based on this study, especially with regard to ID bias.