论文信息 - High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer - 字舞流文

High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer

T. Pichler | A. Randi | J. Pironon | M. Lazerges | T. Moudakir | S. Gautier | N. Sama | Y. Halfaya | R. Alrammouz | M. Piedevache | Md. Iktiham Bin Taher | Thomas Guermont | Nicolas Pelissier