论文信息 - Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)

Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)

Measurements of accumulation-mode (AM) MOS SOI transistors in the 150-300 degrees C temperature range are reported and discussed. The increases of the threshold voltage shift and off leakage current with temperature of these SOI p-MOSFETs are observed to be much smaller than their bulk equivalents. Simple models are presented to support the experimental data.<<ETX>>

D. Flandre | B. Gentinne | P. Francis | A. Terao | J.-P. Colinge

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