Gas-phase silicon etching with bromine trifluoride
暂无分享,去创建一个
We report the first study of gas phase silicon micromachining using pure bromine trifluoride (BrF/sub 3/) gas at room temperature. This work includes both the design of a new apparatus and etching characterization. Consistent etching results and high molecular etching efficiency (80%) have been achieved by performing the etching in a controlled pulse mode. This pure gaseous BrF/sub 3/ etching process is isotropic and has a high etch rate with superb selectivity over silicon dioxide (3000:1), silicon nitride (400-800:1) and photoresist (1000:1). Moreover, gaseous BrF/sub 3/ etching has also been demonstrated in surface micromachining process, where silicon nitride channels and membranes using polysilicon as the sacrificial layer have been successfully fabricated.
[1] Kristofer S. J. Pister,et al. Gas-phase silicon micromachining with xenon difluoride , 1995, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.
[2] H. F. Winters,et al. The etching of silicon with XeF2 vapor , 1979 .
[3] M. Heckele,et al. Fabrication of microlenses by plasmaless isotropic etching combined with plastic moulding , 1996 .
[4] Dale E. Ibbotson,et al. Plasmaless dry etching of silicon with fluorine‐containing compounds , 1984 .