论文信息 - High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process - 字舞流文

High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process

Y. Yeo | D. Chi | Xinke Liu | Wei Liu | L. Tan | Youming Lu | Wenjie Yu | Zhihong Liu | C. B. Soh | M. Bhuiyan | S. Pannirselvam | Liu Wei | P. Somasuntharam | O. Somasuntharam