Control of light-output polarization for surface-emitting-laser type device by strained active layer grown on misoriented substrate

We propose and demonstrate control of light-output polarization for surface-emitting laser-type devices by using strained quantum-well active layers grown on a misoriented substrate. This structure has slightly asymmetric strain tensor elements on the surface plane. Due to orbital-strain interaction, the valence band structures change and the optical transition matrix element depends on the polarization of the light. Here, theoretical analysis and experimental results on the direction of misorientation are described, and it is shown that how the polarization of the light-output is related to asymmetry in strain tensors. For the devices, which have In/sub 0.2/Ga/sub 0.8/As active layers grown on a 2-degree-off-(100) GaAs substrate toward (111)B, the light-output is polarized in [01~1] with the reproducibility of as high as 88%. This highly controlled polarization is probably due to the combination of converse piezoelectric effect and asymmetry in the lattice mismatch on the surface caused by misorientation. >

[1]  Ichiro Ogura,et al.  Current versus Light-Output Characteristics with No Definite Threshold in pnpn Vertical to Surface Transmission Electro-Photonic Devices with a Vertical Cavity , 1991 .

[2]  J. Stark,et al.  Strain tensor elements for misfit‐strained [hhk]‐oriented cubic crystals , 1992 .

[3]  Kenichi Kasahara,et al.  Double heterostructure optoelectronic switch as a dynamic memory with low-power consumption , 1988 .

[4]  K. Kasahara,et al.  Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity , 1993 .

[5]  Kenichi Iga,et al.  Stress effect for polarisation control of surface emitting lasers , 1992 .

[6]  Ichiro Ogura,et al.  Surface‐emitting laser operation in vertical‐to‐surface transmission electrophotonic devices with a vertical cavity , 1991 .

[7]  I. Suemune,et al.  Quantum-confined field-effect light emitters: device physics and experiments , 1990 .

[8]  Y. Kajikawa,et al.  Optical Matrix Elements in (110)-Oriented Quantum Wells , 1991 .

[9]  K. Kasahara,et al.  Effect of sidewall reflector on current versus light output in a pnpn vertical-to-surface transmission electrophotonic device with a vertical cavity , 1993 .

[10]  Kenichi Kasahara,et al.  Vertical to surface transmission electrophotonic device with selectable output light channels , 1989 .

[11]  Kenichi Iga,et al.  Polarisation control for surface emitting lasers , 1991 .

[12]  Kenichi Iga,et al.  Surface emitting semiconductor lasers , 1988 .

[13]  F. Koyama,et al.  Engineered polarization control of GaAs/AlGaAs surface-emitting lasers by anisotropic stress from elliptical etched substrate hole , 1993, IEEE Photonics Technology Letters.

[14]  W. Kohn,et al.  Motion of Electrons and Holes in Perturbed Periodic Fields , 1955 .

[15]  K. Kasahara,et al.  Indistinct threshold laser operation in a pnpn vertical to surface transmission electrophotonic device with a vertical cavity , 1993 .