A Modified Macro Model of FEFET for FEDRAM Application

The authors establish an advanced macro-model that can be used to denote the device behaviors of ferroelectric field effect transistor(FEFET) including the dynamic overturn and the double threshold voltages transfer behaviors.The proposed advanced macro model with the simple and easily extracted model parameters can be performed in the HSPICE environment.The simulations show that the model can well fit the published experimental data.The proposed model can be used in the design and optimization of FEFET-based dynamic random access memory circuits.