论文信息 - Characterization of C coimplanted GexSi1−x epitaxial layers formed by high dose Ge ion implantation in (100) Si - 字舞流文

Characterization of C coimplanted GexSi1−x epitaxial layers formed by high dose Ge ion implantation in (100) Si

S. U. Campisano | S. Lombardo | S. Lagomarsino | V. Raineri | F. Via | A. Kazimirov | K. K. Larsen