A new lateral IGBT for high temperature operation

Abstract The analysis of a new LIGBT with special emphasis on high temperature behaviour is discussed. A comprehensive experimental characterisation of the static characteristics over the temperature range 300–423 K is reported. Two-dimensional (2-D) numerical simulations are used to explain the observed behaviour and to get a physical insight into the effects of temperature on LIGBT performance. Simulation results show a peculiar latch-up mechanism in the proposed new modified structure different from the conventional IGBT structure. The novel LIGBT structure, proposed here, has been compared with LIGBT structures previously reported. All these structures have been fabricated. The experimental latch-up current density of the proposed LIGBT is four times higher than in the other fabricated structures at high temperature. The dynamic latch-up during the LIGBT turn-off process has also been analysed.