论文信息 - Mode-Evolution-based InP/InGaAsP Polarization Rotator with Etching-Stop Layer

Mode-Evolution-based InP/InGaAsP Polarization Rotator with Etching-Stop Layer

We propose and experimentally demonstrate a monolithic InP/InGaAsP mode-evolution-based polarization rotator. Using the adiabatic mode transition inside a tapered half-ridge waveguide, fabrication-tolerant conversion with an efficiency over 97.7% is obtained over the entire C-band.

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