Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

A unique form of Si impurity‐induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1−y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is used to fabricate stripe‐geometry index‐guided laser diodes that are capable of kink‐free single‐mode operation.

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