论文信息 - Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown - 字舞流文

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

H. Amano | S. Nitta | S. Usami | A. Tanaka | Y. Honda | M. Kushimoto | M. Deki | Y. Ando | H. Fukushima | M. Ogura