High density capacitance structures in submicron CMOS for low power RF applications

This paper presents four novel interconnect based capacitors with 2 to 3 times the capacitance density of a conventional metal sandwich capacitor and with self-resonant frequencies above 20 GHz, suitable for low power RF applications. Unlike the conventional capacitor, the capacitance density of these structures increases with the scaling of the technology. The structures have been fabricated in both 0.25 /spl mu/m and 0.18 /spl mu/m CMOS technologies, measured and an equivalent circuit presented.