Large-scale synthesis of single crystalline gallium nitride nanowires

Large-scale synthesis of single crystalline GaN nanowires in anodic alumina membrane was achieved through a gas reaction of Ga2O vapor with a constant flowing ammonia atmosphere at 1273 K. X-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicated that those GaN nanowires with hexagonal wurtzite structure were about 14 nm in diameter and up to several hundreds of micrometers in length. The growth mechanism of the single crystalline GaN nanowires is discussed.

[1]  Timothy J. Trentler,et al.  Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth , 1995, Science.

[2]  R. Davis,et al.  Synthesis Routes and Characterization of High‐Purity, Single‐Phase Gallium Nitride Powders , 1996 .

[3]  D. Bour,et al.  Nitride-based semiconductors for blue and green light-emitting devices , 1997, Nature.

[4]  S. Iijima.  Helical microtubules of graphitic carbon , 1991, Nature.

[5]  Charles M. Lieber,et al.  A laser ablation method for the synthesis of crystalline semiconductor nanowires , 1998, Science.

[6]  M. Inghram,et al.  THERMODYNAMIC STUDIES OF SOME GASEOUS METALLIC CARBIDES , 1958 .

[7]  Gerhard Fasol.  Room-Temperature Blue Gallium Nitride Laser Diode , 1996, Science.

[8]  J. Zolper,et al.  Ion‐implanted GaN junction field effect transistor , 1996 .

[9]  S. Fan,et al.  Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction , 1997 .

[10]  M. Shur,et al.  High transconductance heterostructure field‐effect transistors based on AlGaN/GaN , 1996 .

[11]  W. Qian,et al.  Nanoscale silicon wires synthesized using simple physical evaporation , 1998 .

[12]  Shuji Nakamura,et al.  Polarized Raman spectra in GaN , 1995 .

[13]  John C. Roberts,et al.  Optical memory effect in GaN epitaxial films , 1997 .

[14]  Yi Xie,et al.  A Benzene-Thermal Synthetic Route to Nanocrystalline GaN , 1996, Science.

[15]  Kenji Fukuda,et al.  Ordered Metal Nanohole Arrays Made by a Two-Step Replication of Honeycomb Structures of Anodic Alumina , 1995, Science.

[16]  Y. Kobayashi,et al.  Preparation and properties of III‐V nitride thin films , 1989 .

[17]  Iijima,et al.  Coaxial nanocable: silicon carbide and silicon oxide sheathed with boron nitride and carbon , 1998, Science.