Highly efficient single-junction GaAs thin-film solar cell on flexible substrate
暂无分享,去创建一个
Jaejin Lee | Kangho Kim | Sunghyun Moon | Jaejin Lee | Youngjo Kim | J. Heo | Kangho Kim | Junseok Heo | Youngjo Kim | Sunghyun Moon
[1] R. D. Briggs,et al. A survey of ohmic contacts to III-V compound semiconductors , 1997 .
[2] Myles A. Steiner,et al. Optical enhancement of the open-circuit voltage in high quality GaAs solar cells , 2013 .
[3] E. J. Haverkamp,et al. Wafer reuse for repeated growth of III–V solar cells , 2010 .
[4] E. Yablonovitch,et al. The opto-electronic physics that broke the efficiency limit in solar cells , 2012, 2012 38th IEEE Photovoltaic Specialists Conference.
[5] N. Dhere,et al. Effect of sputtering process parameters on film properties of molybdenum back contact , 2012 .
[6] N. J. Smeenk,et al. Arsenic Formation on GaAs during Etching in HF Solutions: Relevance for the Epitaxial Lift-Off Process , 2013 .
[7] R. Tatavarti,et al. Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.
[8] Kangho Kim,et al. Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks , 2013 .
[9] Fouad Karouta,et al. Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures , 2002 .
[10] Martin A. Green,et al. Solar cell efficiency tables (version 46) , 2015 .
[11] Leathen Shi,et al. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics , 2013, Nature Communications.
[12] Gregg S. Higashi,et al. Flexible Thin-Film Tandem Solar Cells With >30% Efficiency , 2014, IEEE Journal of Photovoltaics.
[13] R. Horng,et al. Improvement in separation rate of epitaxial lift-off by hydrophilic solvent for GaAs solar cell applications , 2014 .
[14] J.H. Klootwijk,et al. Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs , 2004, Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).
[15] Kazuhiko Honjo,et al. Ohmic contacts to p‐GaAs with p+/p regrown structures formed by metalorganic molecular beam epitaxy , 1991 .
[16] S. Forrest,et al. Reuse of GaAs substrates for epitaxial lift-off by employing protection layers , 2012 .
[17] Li-wu Yang,et al. Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors , 2011, IEEE Transactions on Electron Devices.
[18] K. Ploog,et al. The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy , 1981 .
[19] G. Stareev. Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p‐GaAs , 1993 .
[20] Chang Zoo Kim,et al. InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition , 2014 .
[21] Zhiyong Fan,et al. Flexible photovoltaic technologies , 2014 .
[22] P. K. Larsen,et al. Thin film GaAs solar cells with increased quantum efficiency due to light reflection , 2004 .
[23] Stephen R. Forrest,et al. Non‐Destructive Wafer Recycling for Low‐Cost Thin‐Film Flexible Optoelectronics , 2014 .
[24] M. Sugimoto,et al. High efficiency GaAs thin film solar cells by peeled film technology , 1978 .
[25] Martin A. Green,et al. Solar cell efficiency tables (version 40) , 2012, Progress in Photovoltaics: Research and Applications.
[26] M. Melloch,et al. Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications , 1990 .