High Q on-chip passive components for UTSi(R) CMOS technology

UTSi (Ultra-Thin Silicon) on insulator technology shows the promise of full integration of digital, analog, RF, and RF matching circuitry on a single chip. It is based on standard VLSI technology. The process features excellent isolation due to the dielectric substrate, high RF performance transistors, and high quality passive elements. This paper presents the performance of the UTSi passive elements. Measurement data for resistors and capacitors are reported, as well as inductors with high Q.

[1]  N. Suematsu.  On-chip matching Si-MMIC for mobile communication terminal application , 1997, 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers.

[2]  K. Jenkins,et al.  Microwave inductors and capacitors in standard multilevel interconnect silicon technology , 1996 .

[3]  R. Benton,et al.  Low cost UTSi technology for RF wireless applications , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[4]  Jin Gun Koo,et al.  High Q CMOS-compatible microwave inductors using double-metal interconnection silicon technology , 1997, IEEE Microwave and Guided Wave Letters.