Dominant factors in TDDB degradation of Cu interconnects
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[1] K. Sato,et al. Integration and reliability issues of Cu/SiOC interconnect for ArF/90 nm node SoC manufacturing , 2003, IEEE International Electron Devices Meeting 2003.
[2] J. Yuan,et al. Modeling of time-dependent dielectric breakdown in copper metallization , 2003 .
[3] K. Makabe,et al. Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
[4] E. Murakami,et al. Suppression of stress-induced voiding in copper interconnects , 2002, Digest. International Electron Devices Meeting,.
[5] Kenichi Takeda,et al. Effect of NH/sub 3/-plasma treatment and CMP modification on TDDB improvement in Cu metallization , 2001 .
[6] K. Takeda,et al. New dielectric barrier for damascene Cu interconnection: trimethoxysilane-based SiO/sub 2/ film with k=3.9 , 2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
[7] K. Hinode,et al. Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
[8] W. Mckee,et al. Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[9] Kenji Hinode,et al. TDDB improvement in Cu metallization under bias stress , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[10] J. McPherson,et al. UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS , 1998 .
[11] K. Takeda,et al. Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).
[12] M. Kimura,et al. Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdown , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.
[13] Chien Chiang,et al. Diffusion of copper through dielectric films under bias temperature stress , 1995 .
[14] J. McPherson,et al. Acceleration Factors for Thin Gate Oxide Stressing , 1985, 23rd International Reliability Physics Symposium.