Smart grid technologies

The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially for advanced power conversion and military applications, and hence the size and weight of the power electronic system are reduced. Development of 15-kV SiC IGBTs and their impact on utility applications is discussed.

[1]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[2]  A. Agarwal,et al.  Design and Fabrications of High Voltage IGBTs on 4H-SiC , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[3]  I. Takata,et al.  Snubberless turn-off capability of four-inch 4.5 kV GCT thyristor , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[4]  A. Agarwal,et al.  10 kV, 5A 4H-SiC Power DMOSFET , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[5]  A. Huang,et al.  Silicon Carbide Emitter Turn-Off Thyristor , 2008 .

[6]  Tiefu Zhao,et al.  Design and Analysis of a 270kW Five-level DC/DC Converter for Solid State Transformer Using 10kV SiC Power Devices , 2007, 2007 IEEE Power Electronics Specialists Conference.

[7]  Pavel Ivanov,et al.  Carrier lifetime measurements in 10 kV 4H-SiC diodes , 2003 .

[8]  Tiefu Zhao,et al.  ETO light multilevel inverter for STATCOM , 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

[9]  Q. Wahab,et al.  Ionization rates and critical fields in 4H silicon carbide , 1997 .

[10]  M.K. Das Development of a Commercially Viable 4H-SiC PiN Diode Technology , 2006, 2006 International Biennial Baltic Electronics Conference.

[11]  J. Richmond,et al.  A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching , 2008 .

[12]  A Q Huang,et al.  The Future Renewable Electric Energy Delivery and Management (FREEDM) System: The Energy Internet , 2011, Proceedings of the IEEE.

[13]  Pavel Ivanov,et al.  High voltage SiC diodes with small recovery time , 2000 .

[14]  Alex Q. Huang,et al.  Comparison of the state-of-the-art high power IGBTs, GCTs and ETOs , 2000, APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058).

[15]  R. Singh,et al.  3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC , 2001, IEEE Electron Device Letters.

[16]  Allen R. Hefner,et al.  Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device | NIST , 2006 .

[17]  B. J. Baliga,et al.  RBSOA study of high voltage SiC bipolar devices , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.