Zener model description of ferromagnetism in zinc-blende magnetic semiconductors

Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

[1]  Masaaki Tanaka,et al.  Local structures of III-V diluted magnetic semiconductors Ga 1 − x Mn x As studied using extended x-ray-absorption fine structure , 1998 .

[2]  Kwiseon Kim,et al.  Effective masses and valence-band splittings in GaN and AlN , 1997 .

[3]  Magneto-optical investigations on cubic GaN in high magnetic fields , 1998 .

[4]  Jacek K. Furdyna,et al.  Diluted magnetic semiconductors , 1988 .

[5]  G. E. Pikus,et al.  Symmetry and strain-induced effects in semiconductors , 1974 .

[6]  H. Ohno,et al.  Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs , 1997 .

[7]  R. Bhatt,et al.  Transport and thermodynamic properties across the metal-insulator transition , 1991 .

[8]  Masaaki Tanaka,et al.  MAGNETIC AND TRANSPORT PROPERTIES OF III-V BASED MAGNETIC SEMICONDUCTOR (GAMN)AS : GROWTH CONDITION DEPENDENCE , 1999 .

[9]  Naughton,et al.  Nearest-neighbor exchange constant and Mn distribution in Zn1-xMnxTe from high-field magnetization step and low-field susceptibility. , 1986, Physical review. B, Condensed matter.

[10]  S. Gider,et al.  Magnetic Clusters in Molecular Beams, Metals, and Semiconductors , 1996, Science.

[11]  A. Twardowski,et al.  Magnetoabsorption and magnetization of Zn1−xMnxTe mixed crystals , 1984 .

[12]  E. Janzén,et al.  Electronic structure of the GaAs:MnGa center , 1997 .

[13]  Dietl,et al.  Wigner-Seitz approach to spin splitting. , 1992, Physical review. B, Condensed matter.

[14]  H. Ohno,et al.  Making nonmagnetic semiconductors ferromagnetic , 1998, Science.

[15]  David P. DiVincenzo.  Quantum computing and single-qubit measurements using the spin-filter effect (invited) , 1998 .

[16]  T. Wojtowicz,et al.  Influence of s-d exchange interaction on the conductivity of Cd1-xMnxSe:In in the weakly localized regime. , 1986, Physical review letters.

[17]  F. Julien,et al.  Controlling Artificial Atoms , 1998, Science.

[18]  Chang,et al.  Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors. , 1992, Physical review letters.

[19]  H. Ohno,et al.  Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) , 1999 .

[20]  Hideo Ohno,et al.  Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in ( Ga 1 − x Mn x ) As , 1999 .

[21]  H. Ohno,et al.  (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs , 1996 .

[22]  G. Borghs,et al.  Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs , 1997 .

[23]  Interlayer coupling in ferromagnetic semiconductor superlattices , 1998, cond-mat/9810100.