A self-consistent static model of the double- heterostructure laser
暂无分享,去创建一个
[1] D. Scifres,et al. Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser , 1979 .
[2] K. Aiki,et al. Channeled-substrate planar structure (AlGa)As injection lasers , 1977, IEEE Journal of Quantum Electronics.
[3] Naoki Chinone,et al. Nonlinearity in power‐output–current characteristics of stripe‐geometry injection lasers , 1977 .
[4] Donald R. Scifres,et al. Above‐threshold analysis of double‐heterostructure diode lasers with laterally tapered active regions , 1980 .
[5] R. Lang,et al. Lateral transverse mode instability and its stabilization in stripe geometry injection lasers , 1979 .
[6] Donald R. Scifres,et al. Analysis of diode lasers with lateral spatial variations in thickness (A) , 1980 .
[7] Toshihisa Tsukada,et al. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers , 1974 .
[8] J. Buus,et al. A model for the static properties of DH lasers , 1979, IEEE Journal of Quantum Electronics.
[9] A. Yariv,et al. Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents , 1980 .
[10] A. Yariv,et al. Be Implanted (GaAl)As Stripe Geometry Lasers , 1980, Integrated and Guided Wave Optics.
[11] Kohroh Kobayashi,et al. A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser , 1973 .
[12] T. Rozzi,et al. Semiconductor laser analysis: general method for characterising devices of various cross-sectional geometries , 1980 .
[13] Peter M. Asbeck,et al. Lateral mode behavior in narrow stripe lasers , 1979 .