Surface potential at threshold in thin-film SOI MOSFET's
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[1] J. Colinge,et al. Bulk traps in ultrathin SIMOX MOSFET's by current DLTS , 1988, IEEE Electron Device Letters.
[2] H. Feltl. Onset of heavy inversion in MOS devices doped nonuniformly near the surface , 1977, IEEE Transactions on Electron Devices.
[3] R. Lindner. Semiconductor surface varactor , 1962 .
[4] W. L. Brown,et al. n -Type Surface Conductivity on p -Type Germanium , 1953 .
[5] M. Tobey,et al. Concerning the onset of heavy inversion in MIS devices , 1974 .
[6] Yannis Tsividis. Moderate inversion in MOS devices , 1982 .
[7] J. Colinge. Silicon-on-Insulator Technology , 1991 .
[8] J. B. McKitterick,et al. An analytic model for thin SOI transistors , 1989 .
[9] M. White,et al. The effect of channel implants on MOS transistor characterization , 1987, IEEE Transactions on Electron Devices.
[10] H. Hughes,et al. Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique , 1991, IEEE Electron Device Letters.
[11] Hyung-Kyu Lim,et al. Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.
[12] M. Nishida,et al. An improved definition for the onset of heavy inversion in an MOS structure with nonuniformly doped semiconductors , 1980, IEEE Transactions on Electron Devices.
[13] Sorin Cristoloveanu,et al. Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's , 1991 .
[14] R.V.H. Booth,et al. Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's , 1987 .
[15] S. Cristoloveanu,et al. Characterization of carrier generation in enhancement-mode SOI MOSFET's , 1990, IEEE Electron Device Letters.
[16] D. Antoniadis,et al. Calculation of threshold voltage in nonuniformly doped MOSFET's , 1984, IEEE Transactions on Electron Devices.
[17] D. Wouters,et al. Subthreshold slope in thin-film SOI MOSFETs , 1990 .
[18] J.-P. Colinge,et al. Thin-film SOI technology: the solution to many submicron CMOS problems , 1989, International Technical Digest on Electron Devices Meeting.
[19] K. K. Young,et al. Submicrometer near-intrinsic thin-film SOI complementary MOSFETs , 1989 .