20 kV 4H-SiC N-IGBTs
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Subhashish Bhattacharya | Arun Kadavelugu | John W. Palmour | Scott T. Allen | Anant Agarwal | Jim Richmond | Khiem Lam | Craig Capell | Michael J. O'Loughlin | A. Agarwal | S. Ryu | J. Richmond | J. Palmour | M. O'loughlin | S. Allen | S. Bhattacharya | A. Kadavelugu | E. van Brunt | D. Grider | A. Burk | C. Capell | C. Jonas | K. Lam | J. Clayton | Albert A. Burk | Sei Hyung Ryu | Charlotte Jonas | Jack Clayton | Edward van Brunt | Dave Grider
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[2] Kenji Fukuda,et al. Fabrication of a P-Channel SiC-IGBT with High Channel Mobility , 2013 .
[3] Lin Cheng,et al. Development of 15 kV 4H-SiC IGBTs , 2012 .
[4] A. Agarwal,et al. Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs , 2012, International Symposium on Power Semiconductor Devices and IC's.