Intermodulation Distortion in CMOS Attenuators and Switches

Gain control elements are widely used in communication systems both to limit the incident power to the circuitry and to control the amplitude of the transmitted signal. Attenuators are one way of controlling the signal amplitude. The distortion performance of common CMOS attenuator topologies is investigated in this work. CMOS device equations that model the device in different regions of operation and which also model short channel effects are used for calculating distortion performance. Calculated distortion is compared with simulation results and experimental data, and qualitative explanations of the distortion curves as well as the deviation between different sources of data are given. Potential improvements in linearity performance of attenuators via circuit design techniques have also been discussed.

[1]  R.G. Meyer,et al.  Intermodulation distortion in current-commutating CMOS mixers , 2000, IEEE Journal of Solid-State Circuits.

[2]  K. Vavelidis,et al.  Simple 'reconciliation' MOSFET model valid in all regions , 1995 .

[3]  Willy Sansen,et al.  Distortion in bipolar transistor variable-gain amplifiers , 1973 .

[4]  H. J. Sun,et al.  A 2-18 GHz monolithic variable attenuator using novel triple-gate MESFETs , 1990, IEEE International Digest on Microwave Symposium.

[5]  R. Meyer,et al.  High-frequency nonlinearity analysis of common-emitter and differential-pair transconductance stages , 1998, IEEE J. Solid State Circuits.

[6]  R. H. Caverly,et al.  Linear and nonlinear characteristics of the silicon CMOS monolithic 50-/spl Omega/ microwave and RF control element , 1999 .

[7]  Kari Halonen,et al.  A linear-control wide-band CMOS attenuator , 2001, ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196).

[8]  Robert J. Bayruns,et al.  The bootstrapped gate FET (BGFET)-a new control transistor , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[9]  Robert G. Meyer,et al.  Intermodulation in high-frequency bipolar transistor integrated-circuit mixers , 1986 .

[10]  H. Kondoh DC -50 GHz MMIC variable attenuator with a 30 dB dynamic range , 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.

[11]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .

[12]  Ali M. Niknejad,et al.  A DC-10GHz linear-in-dB attenuator in 0.13 /spl mu/m CMOS technology , 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

[13]  Y. Tsividis Operation and modeling of the MOS transistor , 1987 .

[14]  A.M. Niknejad,et al.  A DC-2.5GHz wide dynamic-range attenuator in 0.13/spl mu/m CMOS technology , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..

[15]  Yannis Papananos,et al.  Six-terminal MOSFET's: modeling and applications in highly linear, electronically tunable resistors , 1997 .

[16]  D. A. Fisher,et al.  A temperature-compensated linearizing technique for MMIC attenuators utilizing GaAs MESFETs as voltage-variable resistors , 1990, IEEE International Digest on Microwave Symposium.