A High-Temperature SiC Three-Phase AC - DC Converter Design for > 100/spl deg/C Ambient Temperature
暂无分享,去创建一个
D. Boroyevich | K. Ngo | P. Mattavelli | R. Wang | P. Ning | K. Rajashekara | Zhiqiang Wang | K. Rajashekara | Fei Wang | Khai D. T. Ngo
[1] A. Prasad,et al. An active power factor correction technique for three-phase diode rectifiers , 1989, 20th Annual IEEE Power Electronics Specialists Conference.
[2] C. R. Koripella,et al. Mechanical behavior of ceramic capacitors , 1991, 1991 Proceedings 41st Electronic Components & Technology Conference.
[3] S. Edwards. High temperature. , 1998, Professional nurse.
[4] Wolfgang R. Fahrner,et al. Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications , 2001, IEEE Trans. Ind. Electron..
[5] A. Mantooth,et al. Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments , 2004, 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720).
[6] I.W. Hofsajer,et al. An improved 3D integrated DC/DC converter for high temperature environments , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).
[7] B. Yang,et al. Effect and utilization of common source inductance in synchronous rectification , 2005, Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005..
[8] J. Kolar,et al. A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..
[9] M. Stecher,et al. Key technologies for system-integration in the automotive and Industrial Applications , 2005, IEEE Transactions on Power Electronics.
[10] H. Mantooth,et al. Power Conversion With SiC Devices at Extremely High Ambient Temperatures , 2007, IEEE Transactions on Power Electronics.
[11] H. Mantooth,et al. High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..
[12] Cemal Basaran,et al. High-temperature, high-density packaging of a 60kW converter for >200°C embedded operation , 2006 .
[13] A. Lostetter,et al. Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter , 2006, IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics.
[14] Guo-Quan Lu,et al. Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly , 2006, IEEE Transactions on Device and Materials Reliability.
[15] F. Udrea,et al. Compact Inverter Designed for High-Temperature Operation , 2007, 2007 IEEE Power Electronics Specialists Conference.
[16] J. D. van Wyk,et al. High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment , 2007, IEEE Transactions on Advanced Packaging.
[17] B. McPherson,et al. A Fully Integrated 300°C, 4 kW, 3-Phase, SiC Motor Drive Module , 2007, 2007 IEEE Power Electronics Specialists Conference.
[18] F. Wang,et al. Survey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules , 2007, 2007 IEEE Power Electronics Specialists Conference.
[19] L.M. Tolbert,et al. Silicon-on-insulator based high-temperature electronics for automotive applications , 2008, 2008 IEEE International Symposium on Industrial Electronics.
[20] J. Kolar,et al. High temperature (≫200°C) isolated gate drive topologies for Silicon Carbide (SiC) JFET , 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.
[21] H. Kawafuji,et al. Ultra-small compact transfer molded package for power modules , 2008, 2008 58th Electronic Components and Technology Conference.
[22] H. Morel,et al. Modeling and high temperature characterization of SiC-JFET , 2008, 2008 IEEE Power Electronics Specialists Conference.
[23] D. Boroyevich,et al. A Systematic Topology Evaluation Methodology for High-Density Three-Phase PWM AC-AC Converters , 2008, IEEE Transactions on Power Electronics.
[24] G. Lu,et al. Fatigue lifetime prediction of a novel interface material with plastic failure for power electronics packaging , 2008, 2008 11th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems.
[25] Ryszard Kisiel,et al. Die-attachment solutions for SiC power devices , 2009, Microelectron. Reliab..
[26] Zheng Chen. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices , 2009 .
[27] Fred Wang,et al. A Novel High-Temperature Planar Package for SiC Multi-Chip Phase-Leg Power Module , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.
[28] Bruno Allard,et al. A Lab-Scale Alternative Interconnection Solution of Semiconductor Dice Compatible with Power Modules 3-D Integration , 2010, IEEE Transactions on Power Electronics.
[29] Hideaki Fujita,et al. A resonant gate-drive circuit with optically-isolated control signal and power supply for fast-switching and high-voltage power semiconductor devices , 2013, The 2010 International Power Electronics Conference - ECCE ASIA -.
[30] K.D.T. Ngo,et al. SiC Wirebond Multichip Phase-Leg Module Packaging Design and Testing for Harsh Environment , 2010, IEEE Transactions on Power Electronics.
[31] Alberto Castellazzi,et al. Comprehensive Compact Models for the Circuit Simulation of Multichip Power Modules , 2010, IEEE Transactions on Power Electronics.
[32] Khai D. T. Ngo,et al. Characterization of Lead-Free Solder and Sintered Nano-Silver Die-Attach Layers Using Thermal Impedance , 2011, IEEE Transactions on Components, Packaging and Manufacturing Technology.
[33] Dushan Boroyevich,et al. Transformer-isolated gate drive design for SiC JFET phase-leg module , 2011, 2011 IEEE Energy Conversion Congress and Exposition.
[34] W. Marsden. I and J , 2012 .
[35] Hideaki Fujita. A Resonant Gate-Drive Circuit With Optically Isolated Control Signal and Power Supply for Fast-Switching and High-Voltage Power Semiconductor Devices , 2013, IEEE Transactions on Power Electronics.
[36] Fred C. Lee,et al. New Core Loss Measurement Method for High-Frequency Magnetic Materials , 2010, IEEE Transactions on Power Electronics.