Eddy Current Testing has been mainly used to determine defects of conductive materials and wall thicknesses in heavy industries such as construction or aerospace. Recently, high frequency Eddy Current imaging technology was developed. This enables the acquirement of information of different depth level in conductive thin-film structures by realizing proper standard penetration depth. In this paper, we summarize the state of the art applications focusing on PV industry and extend the analysis implementing achievements by applying spatially resolved Eddy Current Testing. The specific state of frequency and complex phase angle rotation demonstrates diverse defects from front to back side of silicon solar cells and characterizes homogeneity of sheet resistance in Transparent Conductive Oxide (TCO) layers. In order to verify technical feasibility, measurement results from the Multi Parameter Eddy Current Scanner, MPECS are compared to the results from Electroluminescence.
[1]
G. Masetti,et al.
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
,
1983,
IEEE Transactions on Electron Devices.
[2]
T. Fuyuki,et al.
Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
,
2005
.
[3]
Marc Köntges,et al.
Quantifying the risk of power loss in PV modules due to micro cracks
,
2010
.
[4]
Susanne Hillmann,et al.
NEAR‐SURFACE RESIDUAL STRESS‐PROFILING WITH HIGH FREQUENCY EDDY CURRENT CONDUCTIVITY MEASUREMENT
,
2009
.
[5]
Norbert Meyendorf,et al.
High-resolution eddy current sensor system for quality assessment of carbon fiber materials
,
2010
.
[6]
A. Shah,et al.
Thin‐film silicon solar cell technology
,
2004
.