Design of high efficiency switching mode power amplifier for RF and micro-wave

This paper investigates the highly efficient design of switching mode class E power amplifier for frequencies of 900 MHz and 1800 MHz to increase the efficiency of cellular phones batteries thus by reducing the power consumed in the power amplifier. This is the continuation of an ongoing work by the authors. Here, a typical class E circuit design steps are shown for 1800 MHz in addition to the circuit designed for 900MHz. Both circuits are designed using MOSFET. The simulated results were compared with each other in terms of output power, dissipated power in the transistor, harmonics and efficiency. For this, some additional parameters are simulated and presented for better comparison. Efficiencies higher than 67% could be achieved.

[1]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[2]  F. Touati,et al.  Improvement in the efficiency of class-E power amplifier for RF , 2008, 2008 5th International Multi-Conference on Systems, Signals and Devices.

[3]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[4]  Behzad Razavi,et al.  RF Microelectronics , 1997 .

[5]  Nathan O. Sokal,et al.  Class of High-Efficiency Tuned Switching Power Amplifiers , 2009 .

[6]  W. McFarland,et al.  An IC for linearizing RF power amplifiers using envelope elimination and restoration , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).