Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

[1]  R. Davis,et al.  Identifying threading dislocations in GaN films and substrates by electron channelling , 2011, Journal of microscopy.

[2]  R. Davis,et al.  Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates , 2010 .

[3]  Colin J. Humphreys,et al.  On the origin of threading dislocations in GaN films , 2009 .

[4]  C. Eddy,et al.  Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging , 2009 .

[5]  R. Davis,et al.  Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates , 2009 .

[6]  S. Nunoue,et al.  Extremely smooth surface morphology of GaN-based layers on misoriented GaN substrates for high-power blue-violet lasers , 2006 .

[7]  H. Saijo,et al.  Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers , 2006 .

[8]  P. Hinze,et al.  Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. , 2005, Physical review letters.

[9]  Peter Goodhew,et al.  V-defects and dislocations in InGaN/GaN heterostructures , 2005 .

[10]  R. Vaudo,et al.  MOVPE homoepitaxial growth on vicinal GaN(0001) substrates , 2005 .

[11]  H. Morkoç,et al.  Luminescence properties of defects in GaN , 2005 .

[12]  C. Humphreys,et al.  Growth and characterisation of GaN with reduced dislocation density , 2004 .

[13]  Robert F. Davis,et al.  In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment , 2004 .

[14]  K. W. Kim,et al.  Envelope-function analysis of wurtzite InGaN/GaN quantum well light emitting diodes , 2004 .

[15]  Xian-An Cao,et al.  Microstructural origin of leakage current in GaN/InGaN light-emitting diodes , 2004 .

[16]  A. Roskowski,et al.  Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures , 2003 .

[17]  Izabella Grzegory,et al.  Defect-selective etching of GaN in a modified molten bases system , 2002 .

[18]  Jaime A. Freitas,et al.  Gallium nitride materials - progress, status, and potential roadblocks , 2002, Proc. IEEE.

[19]  Jeongyong Lee,et al.  Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density , 2001 .

[20]  Fernando Ponce,et al.  Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence , 2001 .

[21]  Nikhil Sharma,et al.  Chemical mapping and formation of V-defects in InGaN multiple quantum wells , 2000 .

[22]  Hadis Morkoç,et al.  Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries , 2000 .

[23]  Ellen B. Stechel,et al.  Charge accumulation at a threading edge dislocation in gallium nitride , 1999 .

[24]  X. H. Wu,et al.  Dislocation generation in GaN heteroepitaxy , 1998 .

[25]  D. Bour,et al.  Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition , 1996 .

[26]  M. Graef,et al.  Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy , 1995 .